Title :
A wide-band low-noise monolithic transimpedance amplifier
Author :
Meyer, Robert G. ; Blauschild, Robert Alan
fDate :
8/1/1986 12:00:00 AM
Abstract :
A transimpedance amplifier with nominal 200-MHz bandwidth, 6.6-kΩ gain, and 33-nA RMS-equivalent input noise current is described. The circuit is realized in silicon-bipolar-monolithic technology and functions with source capacitances ranging from zero to several picofarads.
Keywords :
Bipolar integrated circuits; Linear integrated circuits; Wideband amplifiers; bipolar integrated circuits; linear integrated circuits; wideband amplifiers; Bandwidth; Broadband amplifiers; Capacitance; Circuit noise; Circuit topology; Equivalent circuits; Low-noise amplifiers; P-i-n diodes; Preamplifiers; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1986.1052567
