Title :
A 5-mA 1-GHz GaAs dual-modulus prescalar IC
Author :
Saito, Shigeki ; Takada, Tohru ; Kato, Naoki
fDate :
8/1/1986 12:00:00 AM
Abstract :
A 1-GHz GaAs dual-modulus divide-by-128/129 prescalar IC with current drain of only 5 mA has been developed. Its current drain is one-sixth that of commercially available Si bipolar ICs used in 800-MHz band mobile radio systems. Five-level series gate low-power source-coupled FET logic (LSCFL) and the 0.50-μm gate buried P-layer SAINT (BP-SAINT) process technology have been used to achieve this small current drain together with high-speed operation. A high-speed divide-by-4/5 modulus divider (3.1 GHz, 13 mA) and divide-by-32 divider (6.1 GHz, 19 mA) has also been designed and fabricated. These prescalars are suitable for use as synthesizers in mobile communication systems.
Keywords :
Dividing circuits; Field effect integrated circuits; III-V semiconductors; Integrated circuit technology; dividing circuits; field effect integrated circuits; integrated circuit technology; Batteries; Circuit synthesis; Delay; FETs; Fabrication; Flip-flops; Gallium arsenide; Logic; Mobile communication; Receivers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1986.1052569
