• DocumentCode
    900733
  • Title

    A 5-mA 1-GHz GaAs dual-modulus prescalar IC

  • Author

    Saito, Shigeki ; Takada, Tohru ; Kato, Naoki

  • Volume
    21
  • Issue
    4
  • fYear
    1986
  • fDate
    8/1/1986 12:00:00 AM
  • Firstpage
    538
  • Lastpage
    543
  • Abstract
    A 1-GHz GaAs dual-modulus divide-by-128/129 prescalar IC with current drain of only 5 mA has been developed. Its current drain is one-sixth that of commercially available Si bipolar ICs used in 800-MHz band mobile radio systems. Five-level series gate low-power source-coupled FET logic (LSCFL) and the 0.50-μm gate buried P-layer SAINT (BP-SAINT) process technology have been used to achieve this small current drain together with high-speed operation. A high-speed divide-by-4/5 modulus divider (3.1 GHz, 13 mA) and divide-by-32 divider (6.1 GHz, 19 mA) has also been designed and fabricated. These prescalars are suitable for use as synthesizers in mobile communication systems.
  • Keywords
    Dividing circuits; Field effect integrated circuits; III-V semiconductors; Integrated circuit technology; dividing circuits; field effect integrated circuits; integrated circuit technology; Batteries; Circuit synthesis; Delay; FETs; Fabrication; Flip-flops; Gallium arsenide; Logic; Mobile communication; Receivers;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1986.1052569
  • Filename
    1052569