DocumentCode :
900776
Title :
Frequency dependencies of power and efficiency of transit-time oscillations in two-valley semiconductors
Author :
Sasaki, A.
Volume :
56
Issue :
10
fYear :
1968
Firstpage :
1757
Lastpage :
1757
Abstract :
A simple analysis is used to show that the power-impedance product of the transit-time oscillations in two-valley semiconductors is proportional to the square of the product of the difference between the applied and the sustaining electric fields and the drift velocity, and inversely propor-portional to the square of the frequency. The result is applied, as an exmple, to the Gunn-effect diode of GaAs.
Keywords :
Anodes; Cathodes; Circuits; Electron mobility; Equations; Gallium arsenide; Gunn devices; Impedance; Radio frequency; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1968.6742
Filename :
1448672
Link To Document :
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