Title :
Comparison of linewidth enhancement factor between p-doped and undoped quantum-dot lasers
Author :
Kim, Jungho ; Su, Hui ; Minin, Serge ; Chuang, Shun Lien
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
The optical linewidth enhancement factor (LEF) of a p-doped quantum-dot (QD) laser is measured below threshold and compared with a theoretical calculation. The optical gain, refractive index, and LEF are well matched with our theoretical model when the thermal effect is isolated by an additional pulse current measurement of the LEF. We also theoretically calculate the LEF of an undoped QD Fabry-Pe´rot (FP) laser assuming that the structure of the undoped FP QD laser is the same as that of the p-doped QD FP laser except the p-type doping. The changes in modal gain and refractive index due to the respective QD ground and excited states are calculated. Based on the theoretical results, we show that the LEF of the p-doped QD laser is smaller than that of the undoped QD laser due to the reduced transparency carrier density.
Keywords :
Fabry-Perot resonators; carrier density; excited states; ground states; laser cavity resonators; quantum dot lasers; refractive index; semiconductor doping; spectral line breadth; thermo-optical effects; transparency; Fabry-Perot laser; excited state; ground state; linewidth enhancement factor; modal gain; optical gain; optical linewidth enhancement factor; p-doped quantum-dot laser; p-type doping; pulse current measurement; refractive index; thermal effect; transparency carrier density; undoped quantum-dot laser; Laser modes; Laser theory; Optical pulses; Optical refraction; Optical variables control; Pulse measurements; Quantum dot lasers; Quantum dots; Quantum well lasers; Refractive index; Linewidth enhancement factor (LEF); quantum dot (QD); semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.873456