DocumentCode :
901083
Title :
Far-field radiation pattern of red emitting thin-film resonant cavity LEDs
Author :
Joray, Reto ; Ilegems, Marc ; Stanley, Ross P. ; Schmid, Wolfgang ; Butendeich, Rainer ; Wirth, Ralph ; Jaeger, Arndt ; Streubel, Klaus
Author_Institution :
Ecole Polytech. Fed. de Lausanne, Switzerland
Volume :
18
Issue :
9
fYear :
2006
fDate :
5/1/2006 12:00:00 AM
Firstpage :
1052
Lastpage :
1054
Abstract :
AlGaInP thin-film resonant cavity light-emitting diodes (RCLEDs) show an improved performance compared to standard red emitting RCLEDs. External quantum efficiencies at 650 nm of 23% and 18% with and without encapsulation, respectively, have been obtained for devices showing a maximum emission in the normal direction. Thanks to the high angle-averaged reflectivity of the bottom hybrid mirror, a strong photon recycling effect occurs in these structures. The decrease of the absorption with increasing injection level reduces photon recycling and increases extraction of lateral guided modes. The redirection of part of the emission from the vertical to the lateral direction with increasing current density is reflected in the evolution of the far-field radiation pattern.
Keywords :
III-V semiconductors; aluminium compounds; cavity resonators; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; mirrors; optical resonators; reflectivity; thin film devices; 650 nm; AlGaInP; AlGaInP light-emitting diodes; current density; external quantum efficiencies; far-field radiation pattern; high angle-averaged reflectivity; hybrid mirror; lateral guided modes; photon recycling effect; red emitting LED; thin film resonant cavity LED; Distributed Bragg reflectors; Encapsulation; Light emitting diodes; Mirrors; Optical resonators; Recycling; Reflectivity; Resonance; Semiconductor diodes; Transistors; Light-emitting diodes (LEDs); optical planar waveguides; resonators; spontaneous emission; thin-film devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.873553
Filename :
1621274
Link To Document :
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