DocumentCode
901201
Title
A 20 mW, 150 GHz InP HEMT MMIC power amplifier module
Author
Samoska, Lorene ; Peralta, Alejandro ; Hu, Ming ; Micovic, Miro ; Schmitz, Adele
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
14
Issue
2
fYear
2004
Firstpage
56
Lastpage
58
Abstract
This paper describes a power amplifier (PA) module containing an InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of output power at 150 GHz, with more than 10 mW available in the 148-160 GHz frequency range.
Keywords
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; indium compounds; millimetre wave power amplifiers; 148 to 160 GHz; 20 mW; HEMT MMIC power amplifier module; InP; amplifier chip; high electron mobility transistor; monolithic millimeter-wave integrated circuit; output power; HEMTs; High power amplifiers; Indium phosphide; Integrated circuit packaging; Laboratories; MMICs; MODFETs; Millimeter wave integrated circuits; Power amplifiers; Propulsion;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2003.822575
Filename
1268096
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