Title :
Modeling of InGaAs MSM photodetector for circuit-level simulation
Author :
Xiang, Andrew ; Wohlmuth, Walter ; Fay, Patrick ; Kang, Sung-Mo ; Adesida, Ilesanmi
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes
Keywords :
III-V semiconductors; S-parameters; SPICE; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor device models; transient analysis; In0.53Ga0.47As; In0.53Ga0.47As metal-semiconductor-metal photodetectors; InGaAs MSM photodetector; S-parameter measurements; SPICE; ac analysis; accurate model; circuit-level simulation; convolution integrals; dark characteristics; dc current characteristics; impulse response functions; large-signal response; physical meaning; small-signal analysis; transient analysis; transit-time limitation; Circuit simulation; Dark current; Indium gallium arsenide; Optical receivers; Photodetectors; Schottky barriers; Substrates; Thermionic emission; Transient analysis; Voltage;
Journal_Title :
Lightwave Technology, Journal of
