Title :
A 1×8 InP/InGaAsP optical matrix switch with low insertion loss and high crosstalk suppression
Author :
Schienle, Meinrad ; Wenger, Gundolf ; Eichinger, S. ; Müller, Jürgen ; Stoll, Lothar ; Müller, Gustav
Author_Institution :
Siemens AG, Munchen, Germany
fDate :
5/1/1996 12:00:00 AM
Abstract :
We present a current controlled passive 1×8 InP/InGaAsP optical matrix switch for routing applications at wavelength 1.55 μm. It is realized in a tree architecture and has integrated tapers for efficient fiber butt coupling. An AR coated device has average fiber-chip-fiber insertion losses of 6.8 and 6.3 dB for TE and TM polarizations, respectively. The homogeneity of the eight outputs is better than 0.3 dB in each polarization state. The crosstalk suppression is better than 19 dB. The performance of the device indicates that large InP-based switching matrices can be realized
Keywords :
III-V semiconductors; antireflection coatings; electro-optical switches; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical crosstalk; optical fibre couplers; optical fibre losses; optical films; semiconductor switches; telecommunication network routing; 1×8 InP/InGaAsP optical matrix switch; 1.55 mum; 6.3 dB; 6.8 dB; AR coated device; InP-InGaAsP; InP-based switching matrices; TE polarization; TM polarization; average fiber-chip-fiber insertion losses; crosstalk suppression; current controlled passive 1×8 InP/InGaAsP optical matrix switch; fiber butt coupling; high crosstalk suppression; homogeneity; integrated tapers; low insertion loss; polarization state; routing applications; tree architecture; Indium phosphide; Insertion loss; Optical control; Optical crosstalk; Optical fiber devices; Optical fiber losses; Optical fiber polarization; Optical switches; Tellurium; Wavelength routing;
Journal_Title :
Lightwave Technology, Journal of
