Pinch-off voltage shifts in MOSFET´s at helium temperatures
Author :
Bostian, C.W.
Volume :
56
Issue :
11
fYear :
1968
Firstpage :
2085
Lastpage :
2085
Abstract :
The pinch-off voltage of several commercial silicon MOSFET types was measured at room temperature and at 4.2°K. Typically, room temperature and 4.2°K values differed in magnitude by approximately one volt.
Keywords :
Boundary conditions; FETs; Helium; Intrusion detection; MOSFET circuits; Message-oriented middleware; Silicon; Temperature measurement; Temperature sensors; Voltage;
