• DocumentCode
    901472
  • Title

    0.5 mu m gate length InP/In0.75Ga0.25As/InP pseudomorphic HEMT with high DC and RF performance

  • Author

    Mesquida Kusters, A. ; Wuller, R. ; Brittner, S. ; Kohl, A. ; Heime, K.

  • Author_Institution
    RWTH Aachen, Germany
  • Volume
    29
  • Issue
    10
  • fYear
    1993
  • fDate
    5/13/1993 12:00:00 AM
  • Firstpage
    841
  • Lastpage
    842
  • Abstract
    High performance InP/In0.75Ga0.25As/InP pseudomorphic double heterojunction (DH) HEMTs with a gate length of 0.5 mu m are reported. Both DC and RF characteristics of this new type of Al-free HEMT demonstrate its suitability for microwave applications.
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; solid-state microwave devices; 0.5 micron; DC performance; InP-In 0.75Ga 0.25As-InP; LP-MOVPE; RF performance; double heterojunction; gate length; microwave applications; pseudomorphic HEMT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930562
  • Filename
    216261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901472