• DocumentCode
    901494
  • Title

    Anomalous enhancement of substrate terminal current beyond pinch-off in silicon n-channel MOS transistors and its related phenomena

  • Author

    Nakahara, Mizuki ; Iwasawa, Hiroshi ; Yasutake, K.

  • Volume
    56
  • Issue
    11
  • fYear
    1968
  • Firstpage
    2088
  • Lastpage
    2090
  • Abstract
    Anomalous enhancement of substrate terminal current is observed in n-channel silicon MOS transistors beyond pinch-off, but not in p-channel devices. This phenomenon is interpreted as the hole current flow caused by the impact ionization of trapped electrons in Si-SiO2interface states and of valenced electrons at the pinched-off channel of the silicon surface.
  • Keywords
    Current measurement; Electron traps; Gain measurement; Heating; Impact ionization; MOSFETs; Silicon; Space vector pulse width modulation; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6810
  • Filename
    1448740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901494