Title :
A proposed method for rapid determination of doping profiles in semiconductor layers
Author :
Leenov, D. ; Stewart, R.G.
Abstract :
A procedure is proposed for determining the impurity atom profile on one side of a p-n junction from harmonic generation measurements. The analysis indicates that a series of determinations can be made without detailed point-by-point calculations. The ultimate resolution of the method is discussed.
Keywords :
Cleaning; Conductivity; Crystals; Doping profiles; FETs; Insulation; Temperature distribution; Transconductance; Voltage; Zinc oxide;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6815
