Title :
Wide spectrum single quantum well superluminescent diodes at 0.8 mu m with bent optical waveguide
Author_Institution :
Superlum Ltd., Moscow, Russia
fDate :
5/13/1993 12:00:00 AM
Abstract :
An AlGaAs quantum well superluminescent diodes (SLDs) with 68 nm spectral width at 5 mW output power have been developed. With 4 mu m mesa stripe angled at 7 degrees with respect to the output facet, the spectral ripple was less than 10% for uncoated devices.
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; light emitting diodes; optical waveguides; semiconductor quantum wells; superradiance; 0.8 micron; 4 micron; 5 mW; AlGaAs; III-V semiconductors; LED; MOCVD; bent optical waveguide; mesa stripe; single quantum well superluminescent diodes; spectral ripple; step index waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930571
