• DocumentCode
    901660
  • Title

    Radiation Response of Two Harris Semiconductor Radiation Hardened 1K CMOS RAMs

  • Author

    Abare, W.E. ; Huffman, D.D. ; Moffett, G.E.

  • Author_Institution
    Harris Corporation Government Information Systems Division Melbourne, Florida 32901
  • Volume
    29
  • Issue
    6
  • fYear
    1982
  • Firstpage
    1712
  • Lastpage
    1715
  • Abstract
    This paper describes the testing of two types 1K CMOS static RAMs in various transient and steady state ionizing radiation environments. Type HM 6551R (256×4 bits) and type HM 6508R (1024×l bit) RAMs were evaluated. The RAMs are radiation hardened versions of Harris´ commercial RAMs. A brief description of the radiation hardened process is presented.
  • Keywords
    CMOS process; Epitaxial growth; Fixtures; Ionizing radiation; Radiation hardening; Random access memory; Read-write memory; Substrates; Testing; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1982.4336434
  • Filename
    4336434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901660