Title :
Radiation Response of Two Harris Semiconductor Radiation Hardened 1K CMOS RAMs
Author :
Abare, W.E. ; Huffman, D.D. ; Moffett, G.E.
Author_Institution :
Harris Corporation Government Information Systems Division Melbourne, Florida 32901
Abstract :
This paper describes the testing of two types 1K CMOS static RAMs in various transient and steady state ionizing radiation environments. Type HM 6551R (256×4 bits) and type HM 6508R (1024×l bit) RAMs were evaluated. The RAMs are radiation hardened versions of Harris´ commercial RAMs. A brief description of the radiation hardened process is presented.
Keywords :
CMOS process; Epitaxial growth; Fixtures; Ionizing radiation; Radiation hardening; Random access memory; Read-write memory; Substrates; Testing; Thyristors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1982.4336434
