DocumentCode
901676
Title
Rapid Annealing in Advanced Bipolar Microcircuits
Author
Wrobel, T.F. ; Evans, D.C.
Author_Institution
Sandia National Laboratories Post Office Box 5800 Albuquerque, New Mexico 87185
Volume
29
Issue
6
fYear
1982
Firstpage
1721
Lastpage
1726
Abstract
Several new device technologies were characterized for rapid-annealing following a burst of fast neutrons. The annealing responses for the "breakout" devices were found to be consistent with those predicted from existing models. An analytical expression derived from the model is presented. Several of the "breakout" devices studied indicated that digital integrated circuits produced from some of the technologies studied could have neutron hardness levels in excess of 1×1015 nvt (E > 10 keV). In addition the neutron response data for FAST and ALS nand gates are presented.
Keywords
Annealing; Degradation; Electron emission; Integrated circuit modeling; Integrated circuit technology; Isolation technology; Laboratories; Neutrons; Space charge; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1982.4336436
Filename
4336436
Link To Document