DocumentCode
901695
Title
A Radiation-Hardened 1K-Bit Dielectrically Isolated Random Access Memory
Author
Sanders, T.J. ; Boarman, J.W. ; Wood, G.M. ; Kasten, A.J.
Author_Institution
Harris Semiconductor Melbourne, Florida 32901
Volume
29
Issue
6
fYear
1982
Firstpage
1733
Lastpage
1736
Abstract
This paper has presented the design, technology and results of a 1024 Bit Dielectrically Isolated Random Access Memory. Essentially all of the electrical parameter design goals have been met with adequate margin for process variations. Radiation data to date consists of total gamma dose and neutron fluence. Because of the dielectric isolation, this part should survive transient ionizing radiation of over 1012 Rad(Si)/sec and has been shown by testing to not upset below 109 Rad(Si)/sec.
Keywords
Apertures; Circuit synthesis; Dielectrics; Integrated circuit technology; Large scale integration; Random access memory; Read-write memory; Resistors; Schottky diodes; Transistors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1982.4336438
Filename
4336438
Link To Document