Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects

Author

Sin, Y.K. ; Horikawa, H. ; Matsui, Yusuke ; Kamijoh, T.

Author_Institution

Oki Electric Industry Co. Ltd., Tokyo, Japan

Volume

29

Issue

10

fYear

1993

fDate

5/13/1993 12:00:00 AM

Firstpage

873

Lastpage

875

Abstract

The authors report ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers entirely grown by a three step MOVPE process for computer interconnects. Uncoated 350 mu m-long buried heterostructure lasers show an extremely low laser threshold of 0.8 mA and a high slope efficiency of 0.41 mW/mA per facet both measured CW at RT, and a high relaxation oscillation frequency of 5.1 GHz at a bias current of 4 mA.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; laser beam applications; optical interconnections; semiconductor lasers; vapour phase epitaxial growth; 0.8 mA; 350 micron; 4 mA; 5.1 GHz; InGaAs-GaAs-InGaP; bias current; buried heterostructure; computer interconnects; high speed; optical interconnects; relaxation oscillation frequency; strained quantum well lasers; three step MOVPE process; ultralow laser threshold;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930583

Filename

216282