DocumentCode :
901744
Title :
Ohmic contacts to p-type ZnSe using ZnTe/ZnSe multiquantum wells
Author :
Hiei, F. ; Ikeda, Makoto ; Ozawa, Masayoshi ; Miyajima, Teruyuki ; Ishibashi, A. ; Akimoto, Katsuhiro
Author_Institution :
Sony Corp., Yokohama, Japan
Volume :
29
Issue :
10
fYear :
1993
fDate :
5/13/1993 12:00:00 AM
Firstpage :
878
Lastpage :
879
Abstract :
Employing p+-ZnTe/ZnSe quantum wells whose sub-bands are aligned in energy so that resonant tunnelling of holes can occur through the multiquantum well region, Au/Pt/Pd nonalloyed ohmic contacts to p-type ZnSe have been realised. A specific contact resistance as low as 5.0*10-2 Omega cm2 has been achieved for N-doped ZnSe with a hole concentration of 7.0*1016 cm-3.
Keywords :
II-VI semiconductors; contact resistance; gold; interface electron states; ohmic contacts; palladium; platinum; semiconductor quantum wells; semiconductor-metal boundaries; tunnelling; zinc compounds; Au-Pt-Pd-ZnTe-ZnSe; MQW; N-doped ZnSe; contact resistance; hole concentration; multiquantum wells; nonalloyed ohmic contacts; p-type ZnSe; p +-ZnTe/ZnSe quantum wells; resonant tunnelling; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930586
Filename :
216285
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=901744
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