• DocumentCode
    901744
  • Title

    Ohmic contacts to p-type ZnSe using ZnTe/ZnSe multiquantum wells

  • Author

    Hiei, F. ; Ikeda, Makoto ; Ozawa, Masayoshi ; Miyajima, Teruyuki ; Ishibashi, A. ; Akimoto, Katsuhiro

  • Author_Institution
    Sony Corp., Yokohama, Japan
  • Volume
    29
  • Issue
    10
  • fYear
    1993
  • fDate
    5/13/1993 12:00:00 AM
  • Firstpage
    878
  • Lastpage
    879
  • Abstract
    Employing p+-ZnTe/ZnSe quantum wells whose sub-bands are aligned in energy so that resonant tunnelling of holes can occur through the multiquantum well region, Au/Pt/Pd nonalloyed ohmic contacts to p-type ZnSe have been realised. A specific contact resistance as low as 5.0*10-2 Omega cm2 has been achieved for N-doped ZnSe with a hole concentration of 7.0*1016 cm-3.
  • Keywords
    II-VI semiconductors; contact resistance; gold; interface electron states; ohmic contacts; palladium; platinum; semiconductor quantum wells; semiconductor-metal boundaries; tunnelling; zinc compounds; Au-Pt-Pd-ZnTe-ZnSe; MQW; N-doped ZnSe; contact resistance; hole concentration; multiquantum wells; nonalloyed ohmic contacts; p-type ZnSe; p +-ZnTe/ZnSe quantum wells; resonant tunnelling; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930586
  • Filename
    216285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901744