DocumentCode
901785
Title
The analysis and design of CMOS multidrain logic and stacked multidrain logic
Author
Wu, Chung-Yu ; Wang, Jinn-Shyan ; Tsai, Ming-Kai
Volume
22
Issue
1
fYear
1987
fDate
2/1/1987 12:00:00 AM
Firstpage
47
Abstract
A CMOS logic circuit called the CMOS multidrain logic (MDL) is proposed, analyzed, and experimentally observed. The basic circuit structure, which is derived from integrated injection logic, consists of an enhancement-mode MOSFET as a current injector and a multidrain MOSFET with drain terminals as output nodes and the gate terminal as input node. As compared with the multidrain NMOS logic, the difference is that an enhancement MOS instead of a depletion NMOS is used as a current injector.
Keywords
CMOS integrated circuits; Integrated circuit technology; Integrated logic circuits; VLSI; integrated circuit technology; integrated logic circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS memory circuits; CMOS technology; Degradation; Logic circuits; Logic design; Logic gates; MOS devices; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1987.1052670
Filename
1052670
Link To Document