• DocumentCode
    901785
  • Title

    The analysis and design of CMOS multidrain logic and stacked multidrain logic

  • Author

    Wu, Chung-Yu ; Wang, Jinn-Shyan ; Tsai, Ming-Kai

  • Volume
    22
  • Issue
    1
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    47
  • Abstract
    A CMOS logic circuit called the CMOS multidrain logic (MDL) is proposed, analyzed, and experimentally observed. The basic circuit structure, which is derived from integrated injection logic, consists of an enhancement-mode MOSFET as a current injector and a multidrain MOSFET with drain terminals as output nodes and the gate terminal as input node. As compared with the multidrain NMOS logic, the difference is that an enhancement MOS instead of a depletion NMOS is used as a current injector.
  • Keywords
    CMOS integrated circuits; Integrated circuit technology; Integrated logic circuits; VLSI; integrated circuit technology; integrated logic circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS memory circuits; CMOS technology; Degradation; Logic circuits; Logic design; Logic gates; MOS devices; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1987.1052670
  • Filename
    1052670