Title :
A GaAs monolithic 6 GHz low-noise amplifier for satellite receivers
Author :
Mott, Richard C.
Author_Institution :
Comsat Lab., Clarksburg, MD, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
A design approach and accurate modeling techniques developed to realize a GaAs monolithic, 6-GHz, two-stage, low-noise amplifier (LNA) with a measured 1.7 dB noise figure and associated 21 dB gain are discussed. This self-biased LNA design, with chip dimensions of 80 mil×135 mil, utilizes an ion-implantation FET model which predicts measured in-band amplifier gain to within 0.5 dB and peak frequency response to within 4%. The derived noise parameter estimation process, which uses a Gaussian elimination technique to predict the measured noise figure to within 0.2 dB, reduces a set of complex, binomial equations to simple relationships which are easily programmable. A deep-recessed gate realization of this LNA design demonstrates that LNA low-noise performance is achievable under FET saturated drain current conditions
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; microwave amplifiers; satellite relay systems; 1.7 dB; 21 dB; 6 GHz; GaAs; Gaussian elimination technique; binomial equations; chip dimensions; deep-recessed gate realization; in-band amplifier gain; ion-implantation FET model; low-noise amplifier; modeling techniques; noise parameter estimation process; peak frequency response; satellite receivers; saturated drain current conditions; self-biased LNA design; FETs; Frequency measurement; Gain measurement; Gallium arsenide; Low-noise amplifiers; Noise figure; Noise measurement; Predictive models; Satellites; Semiconductor device measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
