Title :
Dynamic safe-area protection for power transistors employs peak-temperature limiting
Author :
Widlar, Robert J. ; Yamatake, Mineo
fDate :
2/1/1987 12:00:00 AM
Abstract :
A protection system has been developed for power transistors that allows use of their full capabilities as manufactured, rather than those established by a hypothetical safe-area curve. As a result, higher power ratings can be guaranteed with a given die size. At the same time, reliability is improved by controlling peak temperature and by permitting individual devices to be 100% tested for rated power.
Keywords :
Bipolar transistors; Electric sensing devices; Power transistors; Semiconductor technology; Temperature measurement; bipolar transistors; electric sensing devices; power transistors; semiconductor technology; temperature measurement; Current limiters; Delay; Power transistors; Protection; Remote sensing; Sensor arrays; Temperature control; Temperature sensors; Thermal sensors; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052674
