Title :
A simple model for scaled MOS transistors that includes field-dependent mobility
Author :
Garverick, Steven L. ; Sodini, Charles G.
fDate :
2/1/1987 12:00:00 AM
Abstract :
A simple MOS model that is suitable for hand calculations, but which includes the effect of normal and tangential electric fields on carrier mobility, is described. This device model is derived from semiphysical models for the field dependence of carrier mobility to accurately predict the effect of reduced dimensions. Fitting parameters for n-channel transistors were extracted. The model is used to examine the effect of reduced mobility at high electric fields on logic switching speed and device transconductance.
Keywords :
Insulated gate field effect transistors; Semiconductor device models; insulated gate field effect transistors; semiconductor device models; Circuits; Degradation; Electron mobility; Lead; Logic devices; MOSFETs; Predictive models; Scattering; Silicon; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052681
