Title :
Anisotropy of microwave emission from n-type InSb
Author :
Kokoschinegg, P. ; Seeger, K.
Abstract :
The microwave emission from InSb was measured at 1 GHz. It was observed that the threshold of the emission and the emission itself are dependent on the orientation of the crystal. The emission saturates at a magnetic field strength between 3.5 and 6 kG and an electric field intensity of more than 150 V/cm. All experiments were carried out at 77°K.
Keywords :
Anisotropic magnetoresistance; Circuits; Electron mobility; Frequency; Gallium arsenide; Microwave technology; Power generation; Resonance; Threshold voltage; Voltage-controlled oscillators;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6853
