DocumentCode :
901950
Title :
Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy
Author :
Dangla, J. ; Benchimol, J.L. ; Alexandre, F. ; Sik, H. ; Dubon-Chevallier, C.
Author_Institution :
France Telecom, CNET, Bagneux, France
Volume :
29
Issue :
10
fYear :
1993
fDate :
5/13/1993 12:00:00 AM
Firstpage :
903
Lastpage :
905
Abstract :
GaAs/GaInP heterojunction bipolar transistors grown by chemical beam epitaxy with highly Be-doped base layers have been found to be stable under electrical stress. The devices did not exhibit any DC current gain change when operated at a collector current density of 4*104 A/cm2 and an emitter collector voltage of 3 V for 100 h.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; reliability; semiconductor growth; stability; 100 hr; 3 V; DC current gain; GaInP-GaAs:Be; chemical beam epitaxy; electrical stress; emitter collector voltage; heterojunction bipolar transistors; highly Be-doped base layers; stability;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930603
Filename :
216304
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=901950
بازگشت