Title :
Comments on `A linear NMOS depletion resistor and its application in an integrated amplifier´
Author :
Czarnul, Zdzislaw
fDate :
2/1/1987 12:00:00 AM
Abstract :
For the original article see ibid., vol.SC-19, no.6, p.923-8 (1984). A detailed relation for the MOS drain current in the triode region is proposed for the analysis of a linear NMOS depletion resistor (DEPR) described by J.N. Babanezhad and G.C. Temes. Using this, the experimental results shown by the original authors become clearer and easier to interpret. In addition, the conditions of the DEPR nonlinearity minimum are discussed.
Keywords :
Field effect devices; Field effect integrated circuits; Resistors; field effect devices; field effect integrated circuits; resistors; Circuit testing; Gallium arsenide; Integrated circuit testing; Logic circuits; MESFET integrated circuits; MOS devices; MOSFETs; Propagation delay; Resistors; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052686
