Title :
Dry etching of GaAs and InP for optoelectronic devices
Author :
Carter, A.J. ; Thomas, B. ; Morgan, D.V. ; Bhardwaj, J.K. ; McQuarrie, A.M. ; Stephens, M.A.
Author_Institution :
Sch. of Electr., Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
Abstract :
The plasma etching of GaAs and InP using CH/sub 4//H/sub 2/ process gas is reported, and their etching characteristics as a function of platen temperature are shown. These results highlight the two different etching mechanisms for GaAs and InP. Etching of GaAs using chlorine plasma chemistry is discussed with emphasis on surface roughness and damage and then compared to the CH/sub 4//H/sub 2/ process chemistry which yields better etch surface characteristics.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor technology; sputter etching; CH/sub 4/-H/sub 2/; GaAs; III-V semiconductors; InP; etch surface characteristics; optoelectronic devices; plasma etching; surface roughness; Gallium compounds; Indium compounds; Semiconductor device fabrication; Sputter etching;
Journal_Title :
Optoelectronics, IEE Proceedings J
