DocumentCode :
902157
Title :
28-51 GHz dynamic frequency divider based on 0.15 mu m T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs
Author :
Thiede, A. ; Tasker, P. ; Hulsmann, A. ; Kohler, K. ; Bronner, W. ; Schlechtweg, M. ; Berroth, M. ; Braunstein, J. ; Nowotny, U.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Volume :
29
Issue :
10
fYear :
1993
fDate :
5/13/1993 12:00:00 AM
Firstpage :
933
Lastpage :
934
Abstract :
The design and performance of a 28-51 GHz dynamic frequency divider based on pseudomorphic Al0.2Ga0.8As/In0.25Ga0.75As MODFETs with 0.15 mu m mushroom-shaped gates are presented. The circuit has a power consumption of approximately 440 mW and a chip area of approximately 200*220 mu m2.
Keywords :
III-V semiconductors; aluminium compounds; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; high electron mobility transistors; indium compounds; 0.15 micron; 28 to 51 GHz; 440 mW; Al 0.2Ga 0.8As-In 0.25Ga 0.75As; MODFETs; T-gate; dynamic frequency divider; mushroom-shaped gates; power consumption; pseudomorphic devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930622
Filename :
216323
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=902157
بازگشت