Title :
25 Gbit/s selector module using 0.2 mu m GaAs MESFET technology
Author :
Ohhata, M. ; Togashi, Minoru ; Murata, Kentaro ; Yamaguchi, Satarou
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
5/27/1993 12:00:00 AM
Abstract :
A high-speed selector module has been developed. It is constructed from a selector IC mounted in a ceramic package, a power supply unit, phase shifters, and coaxial cables. The IC was designed using LSCFL and fabricated with 0.2 mu m gate length GaAs MESFETs. The selector module operated above 25 Gbit/s. It is expected to be applied to high-speed IC measurements.
Keywords :
Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; integrated circuit testing; modules; multiplexing equipment; packaging; test equipment; 0.2 micron; 25 Gbit/s; GaAs; LSCFL; MESFET technology; ceramic package; coaxial cables; high-speed IC measurements; low-power source coupled FET logic; multiplexing operation; phase shifters; power supply unit; selector module;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930633
