• DocumentCode
    902281
  • Title

    Alignable liftoff transfer of device arrays via a single polymeric carrier membrane

  • Author

    Callahan, J.J. ; Martin, K.P. ; Drabik, T.J. ; Quimby, B.B. ; Fan, C.

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    5/27/1993 12:00:00 AM
  • Firstpage
    951
  • Lastpage
    953
  • Abstract
    The authors report epitaxial liftoff and direct bonding of GaAs-AlxGa1-xAs heterostructure device arrays and continuous films, using a single transparent polymer membrane to support the material during etch of the sacrificial layer and to manipulate it into position for bonding. Au-Sn eutectic alloy bonding leads to a metallurgical bond in minutes. Photoluminescence and current-voltage characteristics show that material quality is not substantially degraded in the transfer process.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor technology; AuSn; GaAs-Al xGa 1-xAs; alignable liftoff transfer; continuous films; current-voltage characteristics; direct bonding; epitaxial liftoff; eutectic alloy bonding; heterostructure device arrays; metallurgical bond; sacrificial layer; single polymeric carrier membrane; transparent polymer membrane;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930634
  • Filename
    216338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902281