DocumentCode :
902281
Title :
Alignable liftoff transfer of device arrays via a single polymeric carrier membrane
Author :
Callahan, J.J. ; Martin, K.P. ; Drabik, T.J. ; Quimby, B.B. ; Fan, C.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
29
Issue :
11
fYear :
1993
fDate :
5/27/1993 12:00:00 AM
Firstpage :
951
Lastpage :
953
Abstract :
The authors report epitaxial liftoff and direct bonding of GaAs-AlxGa1-xAs heterostructure device arrays and continuous films, using a single transparent polymer membrane to support the material during etch of the sacrificial layer and to manipulate it into position for bonding. Au-Sn eutectic alloy bonding leads to a metallurgical bond in minutes. Photoluminescence and current-voltage characteristics show that material quality is not substantially degraded in the transfer process.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor technology; AuSn; GaAs-Al xGa 1-xAs; alignable liftoff transfer; continuous films; current-voltage characteristics; direct bonding; epitaxial liftoff; eutectic alloy bonding; heterostructure device arrays; metallurgical bond; sacrificial layer; single polymeric carrier membrane; transparent polymer membrane;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930634
Filename :
216338
Link To Document :
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