Title :
A graphical model for two-region saturation in bipolar transistors and its implementation in the modeling program SPICE
Author :
Smithies, S.A. ; Poole, K.F.
fDate :
4/1/1987 12:00:00 AM
Abstract :
Two-region saturation at high injection levels and at low frequencies may be conveniently approximated using a graphical model which introduces the concept of quasi-saturation resistance R/SUB QS/. It is shown how this graphical model may be implemented in the modeling program SPICE with the aid of a distributed equivalent circuit.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Circuit analysis computing; Equivalent circuits; Semiconductor device models; bipolar integrated circuits; bipolar transistors; circuit analysis computing; equivalent circuits; semiconductor device models; Bipolar transistors; Degradation; Electrons; Graphical models; Impact ionization; MOSFET circuits; Optical saturation; Photodetectors; SPICE; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052719
