• DocumentCode
    902425
  • Title

    Geometrical Shaping of InGaN Light-Emitting Diodes by Laser Micromachining

  • Author

    Fu, W.Y. ; Hui, K.N. ; Wang, X.H. ; Wong, K. K Y ; Lai, P.T. ; Choi, H.W.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
  • Volume
    21
  • Issue
    15
  • fYear
    2009
  • Firstpage
    1078
  • Lastpage
    1080
  • Abstract
    Geometrical shaping of InGaN light-emitting diodes (LEDs) by laser micromachining is introduced. The sapphire substrate is shaped with inclined sidewalls at 50deg, serving as a prism favoring light redirection for out-coupling from the top window. Compared to conventional cuboid LEDs with a calculated light extraction efficiency etaext of 18.3%, these shaped LEDs offers a pronounced increase in etaext of up to 85.2%, verified by experimental results.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; laser beam machining; light emitting diodes; micromachining; Al2O3; InGaN; geometrical shaping; laser micromachining; light extraction efficiency; light-emitting diode; prism; sapphire substrate; Laser micro-machining; light-emitting diodes (LEDs);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2022751
  • Filename
    4957011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902425