Title :
Further comments on "Comparison of the neutron radiation tolerance of bipolar and junction field effect transistors"
Author :
Messenger, G.C. ; Buchanan, B. ; Dolan, R. ; Roosild, S.
Author_Institution :
Serenade Terrace, Corona del Mar, Calif.
Keywords :
Bipolar transistors; Conductivity; Equations; Error analysis; FETs; Failure analysis; Germanium; Iron; Neutrons; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1969.6900
