DocumentCode :
902500
Title :
High-efficiency operation of AlGaAs/GaAs power heterojunction bipolar transistors at low collector supply voltage
Author :
Matsuoka, Y. ; Yamahata, S. ; Nakatsugawa, M. ; Muraguchi, M. ; Ishibashi, T.
Author_Institution :
MTT LSI Labs., Atsugi, France
Volume :
29
Issue :
11
fYear :
1993
fDate :
5/27/1993 12:00:00 AM
Firstpage :
982
Lastpage :
984
Abstract :
High-fmax (>160 GHz) AlGaAs/GaAs heterojunction bipolar transistors are developed using power-oriented layer structures and a selfalignment fabrication technology characterised by a base-metal overlaid structure. The fabricated power transistors tested at 2.6 GHz yield maximum power-added efficiencies of 69 and 60% at low supply voltages of 3 and 1.5V, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 1.5 V; 160 GHz; 2.6 GHz; 3 V; 60 percent; 69 percent; AlGaAs-GaAs; base-metal overlaid structure; low collector supply voltage; maximum frequency of oscillation; microwave power applications; power heterojunction bipolar transistors; power-added efficiencies; power-oriented layer structures; selfalignment fabrication technology;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930654
Filename :
216358
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=902500
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