Nonlinear modelling of dynamic self-heating in 28 nm bulk complementary metal–oxide semiconductor technology

A new and simple approach for nonlinear modelling of the dynamic self-heating effect in bulk complementary metal-oxide semiconductor (CMOS) field effect transistors is presented. Low-frequency S-parameter measurements are performed in 28 nm bulk CMOS technology at room temperature between a 10 kHz and 3 GHz frequency range and the thermal impedance (Z_TH) of the devices is extracted. The proposed model is validated through the measurements for different bias points. The results obtained demonstrate a reasonable agreement between theoretical prediction and experimental data.