Title :
High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier
Author :
Shono, M. ; Honda, Shogo ; Ikegami, Tomoaki ; Hiroyama, R. ; Kase, K. ; Yodoshi, K. ; Yamaguchi, Toru ; Niina, T.
Author_Institution :
Sanyo Electric Co. Ltd., Osaka, Japan
fDate :
5/27/1993 12:00:00 AM
Abstract :
High-power tensile strained multiquantum-well AlGaInP laser diodes ( lambda L=636 nm) with a multiquantum barrier have been successfully fabricated by MOCVD using
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor device testing; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 20 mW; 40 mW; 50 degC; 500 h; 636 nm; AlGaInP laser diodes; CW output power; GaAs substrate; MOCVD; high power operation; multiquantum barrier; tensile strained MQW laser diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930674
