Title :
Comparison of Al and TiPtAu metallisations on a GaAs MESFET with GeMoW ohmic contacts
Author :
Merkel, K.G. ; Bright, V.M. ; Robinson, G.D. ; Huang, C.I. ; Trombley, G.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Air Force Inst. of Technol., Wright Patterson AFB, OH, USA
fDate :
5/27/1993 12:00:00 AM
Abstract :
Metal-semiconductor field effect transistors (MESFETs) were compared using either TiPtAu or Al as both gate metal and interconnect metal to GeMoW source/drain contacts. The GeMoW/Al MESFET demonstrated superior I-V characteristics following thermal cycling at 500 degrees C. These results demonstrate a complete device and interconnect metallisation scheme capable of withstanding thermal stressing at 500 degrees C.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium; gallium arsenide; germanium alloys; gold alloys; metallisation; molybdenum alloys; ohmic contacts; platinum alloys; semiconductor-metal boundaries; titanium alloys; tungsten alloys; 500 degC; Al metallisation; Al-GeMoW-GaAs; GaAs MESFET; GeMoW ohmic contacts; I-V characteristics; Ti-Pt-Au alloy metallisation; TiPtAu-GeMoW-GaAs; drain contact; gate metal; interconnect metal; source contact; thermal cycling; thermal stressing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930675
