Title :
Effective thermal conductivity analysis of 1.55 mu m InGaAsP/InP vertical-cavity top-surface-emitting microlasers
Author :
Osinski, M. ; Nakwaski, Wlodzimierz
Author_Institution :
New Mexico Univ., Albuquerque, NM, USA
fDate :
5/27/1993 12:00:00 AM
Abstract :
An analytical approach is developed and applied to investigate the thermal properties of 1.55 mu m microresonator vertical-cavity surface-emitting lasers (VCSELs) mounted substrate-down. The results indicate that difficulties with obtaining the CW operation of long-wavelength VCSELs are primarily associated with intrinsic properties (such as low T0) rather than with their thermal resistance.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; thermal analysis; thermal conductivity of solids; 1.55 micron; CW operation; InGaAsP-InP; long-wavelength; microresonator; substrate-down mounting; thermal conductivity analysis; thermal properties; thermal resistance; top-surface-emitting microlasers; vertical-cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930677
