Title :
Explicit Cinfinity -continuous and general model for nMOSFETs
Author :
Iniguez, B. ; Moreno, Eugenio G.
Author_Institution :
Univ. de Illes Balears, Palma de Mallorca, Spain
fDate :
5/27/1993 12:00:00 AM
Abstract :
An explicit and single-piece model for nMOSFETs is presented. The drain current and total charges for Cinfinity -continuous under all regions of normal operation. Good agreement has been found with HSPICE simulations. The model also improves the smoothness at the transitions between different regions, and hence the convergence.
Keywords :
insulated gate field effect transistors; semiconductor device models; C infinity -continuous; HSPICE simulations; NMOS transistor; convergence; drain current; n-channel devices; nMOSFETs; single-piece model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930693
