DocumentCode
902938
Title
An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications
Author
Larson, Lawrence E.
Volume
22
Issue
4
fYear
1987
fDate
8/1/1987 12:00:00 AM
Firstpage
567
Lastpage
574
Abstract
An improved equivalent circuit model of a gallium-arsenide (GaAs) MESFET that is optimized for the design and analysis of precision analog integrated circuits is described. These circuits entail different modeling requirements from digital or microwave circuits, for which existing equivalent circuit models are optimized. Improved techniques are presented to model the drain-to-source conductance, device capacitance, and the functional dependence of drain-to-source current.
Keywords
Equivalent circuits; Field effect integrated circuits; Gallium arsenide; III-V semiconductors; Linear integrated circuits; Schottky gate field effect transistors; Semiconductor device models; equivalent circuits; field effect integrated circuits; gallium arsenide; linear integrated circuits; semiconductor device models; Analog integrated circuits; Capacitance; Electron mobility; Equivalent circuits; Gallium arsenide; Integrated circuit modeling; Integrated circuit technology; MESFET integrated circuits; Microwave circuits; Silicon;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1987.1052774
Filename
1052774
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