Title :
Very low-frequency measurements of flicker noise in silicon planar transistors
Author :
Martin, J.C. ; Mateu-Perez, F.X. ; Serra-Mestres, F.
Author_Institution :
Laboratoire de Génie Ã\x89lectrique, Toulouse, France
fDate :
9/1/1966 12:00:00 AM
Abstract :
The noise-power spectrum from 0.01 to 10¿4 Hz is measured using a progressive bandwidth-measuring method. The 1/f law is verified, and it is found that flicker noise may be represented in the common-emitter configuration by an input current generator iB given in terms of current collector Ie and current gain ß by iB2¿ = C¿f/f Ie3/2/ß2
Keywords :
noise measurement; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660290
