DocumentCode :
903037
Title :
Compact analytical physical-based model of LTPS TFT for active matrix displays addressing circuits simulation and design
Author :
Benzarti, Walid ; Plais, François ; De Luca, Anthony ; Pribat, Didier
Author_Institution :
Thales Res. & Technol., Orsay, France
Volume :
51
Issue :
3
fYear :
2004
fDate :
3/1/2004 12:00:00 AM
Firstpage :
345
Lastpage :
350
Abstract :
Either at pixel or driver levels, low-temperature polysilicon (LTPS) is becoming a standard technology for the fabrication of thin-film transistors (TFTs) used in active matrix liquid crystal displays and in active matrix organic light emissive displays. Given the complexity of addressing or pixel circuits, simulation is becoming more and more necessary. In order to reach the required level of simulation efficiency, an accurate model has been developed. This model takes into account all the operating regimes, capacitors contributions, and frequency dispersion effects. In order to be able to simulate large number of matrix pixels and/or integrated drivers, this model is simple enough to allow simulator convergence. Based on 38 parameters, it presents an easy electrical parameters characterization methodology. Moreover, physical parameters use allows an easy modification of the model performances depending on polycrystalline silicon TFT technology properties and evolution.
Keywords :
circuit layout; liquid crystal displays; organic light emitting diodes; thin film transistors; LTPS TFT; active matrix displays; active matrix liquid crystal displays; active matrix organic light emissive displays; analytical physical-based model; capacitors; circuit design; circuit simulation; frequency dispersion; low-temperature polysilicon; pixel circuits; polycrystalline silicon TFT; thin-film transistors; Active matrix addressing; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Active matrix technology; Analytical models; Circuit simulation; Driver circuits; Fabrication; Liquid crystal displays; Thin film transistors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.821379
Filename :
1268257
Link To Document :
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