An analytical model for electron transport and luminance in SrS:Cu,Ag ACTFEL display devices

Author

Singh, Vijay P. ; Sivakumar, Praveen ; Aguilera, Alberto ; Morton, David C. ; Forsythe, Eric

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Kentucky, Lexington, KY, USA

Volume

51

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

357

Lastpage

363

Abstract

An analytical model is developed to explain electron transport and luminance mechanisms in SrS:Cu,Ag ac thin film electroluminescent (ACTFEL) display devices. The model includes shallow and deep interface states, bulk traps, and impact excitation and ionization of activators. Mathematical expressions describing optoelectronic processes in the phosphor layer and interface states are written and numerical solutions for field, current and luminance are obtained. Results of calculations are compared with experimental data. The model is able to simulate the dominant features of the experimental luminance and current waveforms.

Keywords

copper; electroluminescence; electroluminescent devices; electron mobility; flat panel displays; impact ionisation; interface states; semiconductor junctions; silver; strontium compounds; thin film circuits; ACTFEL display devices; SrS:Cu,Ag; ac thin film electroluminescent display devices; activator ionization; bulk traps; current waveforms; deep interface states; electroluminescence; electron luminance; electron transport; flat panel displays; impact excitation; optoelectronic processes; phosphor layer; shallow interface states; thin film devices; Analytical models; Electroluminescent devices; Electron traps; Flat panel displays; Insulation; Interface states; Ionization; Luminescence; Phosphors; Thin film devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.822596

Filename

1268259