Title :
The Structure of GaN-Based Transverse Junction Blue LED Array for Uniform Distribution of Injected Current/Carriers
Author :
Shi, Jin-Wei ; Guol, Shi-Hao ; Lin, C.-S. ; Sheu, Jinn-Kong ; Chang, Kuo-Hua ; Lai, W.C. ; Kuo, C.H. ; Tun, C.J. ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
In this study, we demonstrate a GaN-based transverse junction blue LED array. This device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped multiple quantum wells (MQWs). Due to the transverse flow of injection carriers, problems related to nonuniform current distribution, nonuniform carrier distribution among different MQWs, and bias-dependent shape of the electroluminescence spectra such as that occurring in traditional GaN-based blue LEDs with vertical p-n junctions and large active area (>1 mm2) are all greatly minimized in our structure.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; light emitting diodes; semiconductor growth; semiconductor junctions; semiconductor quantum wells; wide band gap semiconductors; GaN; LED structure; electroluminescence spectra; injected current; n-type semiconductor layer regrowth; nonuniform carrier distribution; nonuniform current distribution; transverse flow; transverse junction blue LED array; undoped multiple quantum wells; GaN LEDs; white light generation;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2009.2017029
