A self-consistent DC-AC two dimensional electrothermal model for GaAlAs/GaAs microwave power HBTs

Author

Marty, Antoine ; Camps, Thierry ; Tasselli, Josiane ; Pulfrey, David L. ; Bailbe, Jean Pierre

Author_Institution

Lab. d´´Autom. et. d´´Anal. des Syst., CNRS, Toulouse, France

Volume

40

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

1202

Lastpage

1210

Abstract

A 2D self-consistent model has been developed to investigate the coupled electrothermal problem in GaAlAs/GaAs HBTs under DC and AC conditions. Electrical and thermal aspects of device behavior are simultaneously investigated by means of a nodal analysis of the distributed and physics-based model using a circuit simulator. The effects of base widening and the temperature dependence of the thermal conductivity are taken into account. Rigorous simulations are compared to the results given under different approximations. In particular, the sensitivity to the temperature dependence of the electron mobility is used to highlight the beneficial role of the negative temperature coefficient of the current gain in determining the thermal stability of the device. An HF performance criterion (maximum stable gain) is calculated and then compared to the results derived from the isothermal approximation

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; heterojunction bipolar transistors; power transistors; semiconductor device models; solid-state microwave devices; thermal analysis; GaAlAs-GaAs; HF performance criterion; base widening; circuit simulator; coupled electrothermal problem; current gain; electron mobility; maximum stable gain; microwave power HBT; negative temperature coefficient; nodal analysis; self-consistent DC-AC two dimensional electrothermal model; temperature dependence; thermal conductivity; thermal stability; Analytical models; Circuit simulation; Coupling circuits; Electron mobility; Electrothermal effects; Gallium arsenide; Temperature dependence; Temperature sensors; Thermal conductivity; Thermal stability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.216422

Filename

216422