Title :
Improved Output Power of 380 nm InGaN-Based LEDs Using a Heavily Mg-Doped GaN Insertion Layer Technique
Author :
Huang, Shih-Cheng ; Wuu, Dong-Sing ; Wu, Peng-Yi ; Chan, Shih-Hsiung
Author_Institution :
Dept. of Mater. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
High-performance InGaN-based 380 nm UV LEDs are fabricated by using a heavily Mg-doped GaN insertion layer (HD-IL) technique. Based on the transmission electron microscopy, etch pit density, and cathodoluminescence results, the HD-IL technique can substantially reduce the defect density of GaN layer. The double-crystal X-ray diffraction results are in good agreement with those observations. The internal quantum efficiency of LED sample with an HD-IL shows around 40% improvement compared with the LED sample without the use of HD-IL. When the vertical-type LED chips (size: 1 mm times 1 mm) are driven by a 350 mA current, the output powers of the LEDs with and without an HD-IL are measured to be 203.4 and 158.9 mW, respectively. As much as 28% increased light output power is achieved.
Keywords :
III-V semiconductors; X-ray diffraction; cathodoluminescence; gallium compounds; indium compounds; light emitting diodes; transmission electron microscopy; InGaN; cathodoluminescence; double-crystal X-ray diffraction; etch pit density; insertion layer technique; internal quantum efficiency; transmission electron microscopy; wavelength 380 nm; Metalorganic chemical vapor deposition; UV LEDs; threading dislocation;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2009.2014778