Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs

Author

Tedesco, Carlo ; Zanoni, Enrico ; Canali, Claudio ; Bigliardi, Stefano ; Manfredi, Manfredo ; Streit, Dwight C. ; Anderson, Wallace T.

Author_Institution

Dipartimento di Elettronica ed Inf., Padova Univ., Italy

Volume

40

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

1211

Lastpage

1214

Abstract

Impact ionization and light emission have been studied in pseudomorphic AlGaAs/InGaAs HEMTs characterized by δ doping in the undoped AlGaAs layer and by additional planar doping within the InGaAs channel, and suitable for high-power applications. Impact ionization has been demonstrated to the limiting effect for high V_ds applications. Emission spectra in the 1.1-2.6 eV range have been analyzed. They show peaks at low energy due to recombination mechanisms and a long tail due to hot electrons

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; electron-hole recombination; gallium arsenide; high electron mobility transistors; hot carriers; impact ionisation; power transistors; 1.1 to 2.6 eV; AlGaAs-InGaAs; delta doping; high power pseudomorphic HEMT; hot electrons; impact ionization; light emission; planar doping; recombination mechanisms; Doping; Electric breakdown; Electron mobility; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Irrigation; MODFETs; Power generation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.216423

Filename

216423