DocumentCode
903223
Title
Two-dimensional numerical analysis of floating-gate EEPROM devices
Author
Concannon, Ann ; Keeney, S. ; Mathewson, A. ; Lombardi, Carolina
Author_Institution
NMRC, Univ. Coll., Cork
Volume
40
Issue
7
fYear
1993
fDate
7/1/1993 12:00:00 AM
Firstpage
1258
Lastpage
1262
Abstract
The importance of transient analysis in the design of floating-gate EEPROMs is demonstrated. Anomalous behavior, which was identified during transient measurements, has been simulated using HFIELDS, a general-purpose two-dimensional (2D) numerical device simulator. The corrective action that was taken at the time to eliminate the problem has been analyzed and explained using the simulation results. In addition, the simulator has been used to investigate 2D effects in the device due to process nonidealities
Keywords
CMOS integrated circuits; EPROM; numerical analysis; transient response; tunnelling; 2D numerical device simulator; CMOS; HFIELDS; floating-gate EEPROM devices; numerical analysis; process nonidealities; transient analysis; tunnel current spike; Analytical models; EPROM; Electrodes; Electrons; Helium; Nonvolatile memory; Numerical analysis; Numerical simulation; Transient analysis; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.216430
Filename
216430
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