Title :
Two-dimensional numerical analysis of floating-gate EEPROM devices
Author :
Concannon, Ann ; Keeney, S. ; Mathewson, A. ; Lombardi, Carolina
Author_Institution :
NMRC, Univ. Coll., Cork
fDate :
7/1/1993 12:00:00 AM
Abstract :
The importance of transient analysis in the design of floating-gate EEPROMs is demonstrated. Anomalous behavior, which was identified during transient measurements, has been simulated using HFIELDS, a general-purpose two-dimensional (2D) numerical device simulator. The corrective action that was taken at the time to eliminate the problem has been analyzed and explained using the simulation results. In addition, the simulator has been used to investigate 2D effects in the device due to process nonidealities
Keywords :
CMOS integrated circuits; EPROM; numerical analysis; transient response; tunnelling; 2D numerical device simulator; CMOS; HFIELDS; floating-gate EEPROM devices; numerical analysis; process nonidealities; transient analysis; tunnel current spike; Analytical models; EPROM; Electrodes; Electrons; Helium; Nonvolatile memory; Numerical analysis; Numerical simulation; Transient analysis; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
