Title :
Steady-state modeling of resistive-gate MOSFETs
Author :
Fu, Hua ; Cooper, James A., Jr.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
The Pao-Sah model for the long-channel MOSFET is generalized to include MOSFETs with resistive-gate electrodes (RG-MOSFETs). The RG-MOdSFETs current-voltage characteristics are studied using this extended Pao-Sah model. The steady-state operation of the RG-MOSFET can be divided into three regimes, separated by the uniform channel condition and the pinch-off condition, respectively. The regions of operation are discussed, and a simple analytical I-V expression is given for the device
Keywords :
insulated gate field effect transistors; semiconductor device models; Pao-Sah model; current-voltage characteristics; pinch-off condition; resistive gate MOSFET; steady-state operation; uniform channel condition; Current-voltage characteristics; Electron mobility; FETs; Gallium arsenide; Helium; MOSFETs; Steady-state; Transient analysis; Velocity measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
