Title :
NMOS device characteristics in electron-beam-recrystallized SOI
Author :
Thompson, Lance R. ; Buser, James R. ; Meyer, Jack D. ; Moore, Cameron A. ; Fukumoto, Jay T. ; Collins, George J.
Author_Institution :
Storage Technol. Corp., Louisville, CO, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
Characteristics of n-channel MOSFETs fabricated in cold-cathode electron-beam-recrystallized silicon-on-oxide layers have been examined. Assorted crystallographic defects exist in the recrystallized silicon layer, ranging from highly branched subgrain boundaries to widely spaced parallel subgrains and rows of threading dislocations. Some of these MOSFET transistors have characteristics approaching those fabricated in bulk silicon including ≈828 cm2/V-s electron surface mobilities and 130 mV/decade inverse subthreshold slopes. However, many of the devices tested exhibited leakage currents up to 10-6 A/μm, resulting in high inverse subthreshold slopes and reduced threshold voltages. Some effects of crystal imperfections on device behavior are discussed
Keywords :
carrier mobility; dislocations; electron beam applications; grain boundaries; insulated gate field effect transistors; leakage currents; recrystallisation annealing; semiconductor-insulator boundaries; SOI NMOS device; crystal imperfections; crystallographic defects; electron beam recrystallisation; electron surface mobilities; highly branched subgrain boundaries; inverse subthreshold slopes; leakage currents; n-channel MOSFETs; threading dislocations; threshold voltages; widely spaced parallel subgrains; Cathodes; Crystalline materials; Crystallography; Electron beams; Leakage current; MOS devices; MOSFET circuits; Optical films; Optical waveguides; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
