Title :
A novel metal-insulator-metal structure for field-programmable devices
Author :
Cohen, Simon S. ; Soares, Antonio M. ; Gleason, Edward F. ; Wyatt, Peter W. ; Raffel, Jack I.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
A metal-insulator-metal (MIM) capacitor structure has been developed for use in field-programmable gate arrays (FPGAs) as a voltage-programmable link (VPL). The structure relies on a combination of a refractory metal and aluminum as the lower electrode, and either a similar combination or aluminum alone as the top electrode. The insulator is prepared by means of plasma-enhanced chemical vapor deposition (PECVD). It comprises a sandwich of nearly stoichiometric silicon dioxide interposed between two like layers of silicon-rich silicon nitride. The structure has displayed characteristics desirable for use in emerging FPGA technology, including high density, low on-resistance, reduced capacitance, and low programming voltage
Keywords :
aluminium; capacitance; logic arrays; metal-insulator-metal devices; molybdenum; plasma CVD; silicon compounds; FPGAs; MIM capacitor; Mo-Al-Si3N4-SiO2-Si3N 4-Al; capacitance; field-programmable gate arrays; high density; low on-resistance; low programming voltage; metal-insulator-metal structure; plasma-enhanced chemical vapor deposition; voltage-programmable link; Aluminum; Electrodes; Field programmable gate arrays; Insulation; MIM capacitors; Metal-insulator structures; Plasma chemistry; Plasma density; Plasma properties; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
